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TGAN60N65F2DS
TGAN60N65F2DS insulated gate bipolar transistor is made by the second generation field stop II process of Terreno. It is 650V, has low switching loss, is suitable for multiple temperature ranges, can operate at 175 ℃, is easy to operate in parallel, complies with ROHS standard and has obtained JEDEC qualification certification. The product can be used in UPS, electric welding machine, inverter, solar energy and other fields.Details +TGAN60N65F2DS
IGBT
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TGAN40N65F2DS
TGAN40N65F2DS insulated gate bipolar transistor is made by the second generation field stop II process of Terreno, 650V, has low switching loss, is suitable for multiple temperature ranges, can operate at 175 ℃, is easy to operate in parallel, complies with ROHS standard and has obtained JEDEC qualification certification. The product can be used in UPS, electric welding machine, inverter, solar energy and other fields.Details +TGAN40N65F2DS
IGBT
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SD8666QS
SD8666QS is a quasi resonant current mode PWM + PFM controller with built-in high-voltage power MOSFET and external sampling resistance for switching power supply. SD8666QS has multiple mode control: under heavy load, it works in QR mode at high voltage, which can reduce switching loss, and CCM mode with fixed frequency (65khz) at low voltage. Working in QR + PFM mode under medium load and light load can improve the conversion efficiency. Under no-load, enter the burping mode to effectively reduce the standby power consumption of the circuit.Details +SD8666QS
Controler
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G5S12020BM
Positive temperature coefficient, easy to use in parallel. Temperature independent switching characteristics. The maximum working temperature is 175 ℃. Zero reverse recovery current. Zero forward recovery voltage. Applications: switching mode power supply (SMPS), power factor correction (PFC). Motor drive, photovoltaic inverter, uninterruptible power supply, wind turbine generator, train traction system, electric vehicle.Details +G5S12020BM
SBD
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